Terahertz Imaging with GaAs and GaN Plasma Field Effect Transistors Detectors

被引：0
|
作者：
Knap, Wojciech [1 ,2 ]
But, Dmytro B. [1 ,2 ]
Dyakonova, Nina [1 ,2 ]
Coquillat, Dominique [1 ,2 ]
Teppe, Frederic [1 ,2 ]
Suszek, Jaroslaw [3 ]
Siemion, Agnieszka M. [3 ]
Sypek, Maciej [3 ]
Szkudlarek, Krzesimir [4 ]
Cywinski, Grzegorz [4 ]
Yahniuk, Ivan [4 ]
机构：
[1] Univ Montpellier, Lab Charles Coulomb, Montpellier, France
[2] CNRS, Montpellier, France
[3] Warsaw Univ Technol, Opt Informat Proc Lab, Warsaw, Poland
[4] Polish Acad Sci, Inst High Pressure Phys, Warsaw, Poland
来源：
PROCEEDINGS OF THE 23RD INTERNATIONAL CONFERENCE ON MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS (MIXDES 2016) | 2016年
关键词：
Terahertz detectors; GaN THz FETs; THz cameras; security scanners;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An overview of recent results concerning THz detection related to plasma nonlinearities in nanometer field effect transistors is presented. In particular, the research on the dynamic range of these detectors is described and two different technologies GaAs and GaN are compared. As a conclusion, we will show first real world applications of the plasma field effect transistors based THz detectors: demonstrators of the imagers (cameras and linear scanners) developed for fast postal security and for nondestructive industrial quality control.
引用
收藏
页码：74 / 77
页数：4
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