Surface and bulk mobilities of oligothiophene single crystals

被引：42

作者：

Schön, JH ^{[1
]}

Kloc, C ^{[1
]}

Laudise, RA ^{[1
]}

Batlogg, B ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 24期

关键词：

D O I：

10.1063/1.122828

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality single crystals of alpha-quaterthiophene (alpha-4T) and alpha-hexathiophene (alpha-6T) were investigated to compare intrinsic bulk and surface electrical properties. The bulk properties of these organic p-type semiconductors are derived from extended current-voltage characteristics and the surface properties from single crystal field-effect transistor measurements. Most significantly, charge carrier mobilities as high as 0.5 cm(2)/V s are observed in alpha-6T both in the bulk and at the surface. The high quality and purity of the crystals are evident from the low trap densities (<10(15) cm(-3)) and the even lower dopant concentrations (2 x 10(13) for alpha-4T and 7 x 10(10) cm(-3) for alpha-6T). These intrinsically high performance figures, together with the ease of processing, make these oligothiophenes attractive materials for "plastic electronic'' devices. (C) 1998 American Institute of Physics. [S0003-6951(98)02850-2].

引用

页码：3574 / 3576

页数：3

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