Thermoelectric transport properties in 3D Dirac semimetal Cd3As2

被引:15
作者
Amarnath, R. [1 ]
Bhargavi, K. S. [1 ]
Kubakaddi, S. S. [2 ]
机构
[1] Siddaganga Inst Technol, Dept Phys, Tumakuru 572103, Karnataka, India
[2] KLE Technol Univ, Dept Phys, Hubballi 580031, Karnataka, India
关键词
electron-phonon interaction; charged impurity scattering; Ritz iteration; 3DDS Cd3As2; electronic thermal conductivity; thermopower; ELECTRICAL-RESISTIVITY; THERMAL-CONDUCTIVITY; DIELECTRIC-CONSTANT; MOBILITY;
D O I
10.1088/1361-648X/ab720f
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Thermoelectric transport properties, namely, electrical conductivity, electronic thermal conductivity, and diffusion thermopower are theoretically investigated in 3D Dirac semimetal Cd3As2. We employ Boltzmann transport formalism and consider the electron scattering by charged impurities, short-range disorder, acoustic phonons, and optical phonons. The Boltzmann transport equation is solved using the Ritz iteration technique to obtain the first-order perturbation distribution function for the interaction of electrons with inelastic polar optical phonons scattering. The numerical results are presented in the temperature range 2-300 K with the electron concentration in the range (0.1-10) x 10(18) cm(-3). It is found that, at low temperature < similar to 70 K transport coefficients are dominated by charged impurity scattering and at higher temperature the phonon scattering is found to be dominant. The validity of Wiedemann-Franz law is examined. Recently observed experimental results are explained by our theory.
引用
收藏
页数:11
相关论文
共 53 条
[11]   Electronic and optical properties of topological semimetal Cd3As2 [J].
Conte, Adriano Mosca ;
Pulci, Olivia ;
Bechstedt, Friedhelm .
SCIENTIFIC REPORTS, 2017, 7
[12]   Electronic transport in two-dimensional graphene [J].
Das Sarma, S. ;
Adam, Shaffique ;
Hwang, E. H. ;
Rossi, Enrico .
REVIEWS OF MODERN PHYSICS, 2011, 83 (02) :407-470
[13]   Large linear magnetoresistance in Dirac semimetal Cd3As2 with Fermi surfaces close to the Dirac points [J].
Feng, Junya ;
Pang, Yuan ;
Wu, Desheng ;
Wang, Zhijun ;
Weng, Hongming ;
Li, Jianqi ;
Dai, Xi ;
Fang, Zhong ;
Shi, Youguo ;
Lu, Li .
PHYSICAL REVIEW B, 2015, 92 (08)
[14]  
Gantmakher V.F., 1987, Carrier Scattering in Metals and Semiconductors
[15]   The rise of graphene [J].
Geim, A. K. ;
Novoselov, K. S. .
NATURE MATERIALS, 2007, 6 (03) :183-191
[16]   Quantum materials for thermoelectricity [J].
Gooth, Johannes ;
Schierning, Gabi ;
Felser, Claudia ;
Nielsch, Kornelius .
MRS BULLETIN, 2018, 43 (03) :187-192
[17]   Quantum Transport Evidence for the Three-Dimensional Dirac Semimetal Phase in Cd3As2 [J].
He, L. P. ;
Hong, X. C. ;
Dong, J. K. ;
Pan, J. ;
Zhang, Z. ;
Zhang, J. ;
Li, S. Y. .
PHYSICAL REVIEW LETTERS, 2014, 113 (24)
[18]   Acoustic phonon scattering limited carrier mobility in two-dimensional extrinsic graphene [J].
Hwang, E. H. ;
Das Sarma, S. .
PHYSICAL REVIEW B, 2008, 77 (11)
[19]   THERMOELECTRIC-POWER AND TRANSVERSE NERNST-ETTINGSHAUSEN COEFFICIENT OF CD3AS2 AT 300K [J].
JAYGERIN, JP ;
AUBIN, MJ ;
CARON, LG .
PHYSICAL REVIEW B, 1978, 18 (08) :4542-4545
[20]   ELECTRON-MOBILITY AND STATIC DIELECTRIC-CONSTANT OF CD3AS2 AT 4.2K [J].
JAYGERIN, JP ;
AUBIN, MJ ;
CARON, LG .
SOLID STATE COMMUNICATIONS, 1977, 21 (08) :771-774