Second-Order Josephson Effect in Excitonic Insulators

被引:16
|
作者
Sun, Zhiyuan [1 ]
Kaneko, Tatsuya [1 ]
Golez, Denis [2 ,3 ,4 ]
Millis, Andrew J. [1 ,2 ]
机构
[1] Columbia Univ, Dept Phys, 538 West 120th St, New York, NY 10027 USA
[2] Flatiron Inst, Ctr Computat Quantum Phys, 162 5th Ave, New York, NY 10010 USA
[3] Univ Ljubljana, Fac Math & Phys, Jadranska 19, SI-1000 Ljubljana, Slovenia
[4] Jozef Stefan Inst, Jamova 39, SI-1000 Ljubljana, Slovenia
关键词
SYMMETRY-BREAKING; S-WAVE; QUANTUM; PHASE; CONDENSATION; STATE; SYSTEMS; ORDER;
D O I
10.1103/PhysRevLett.127.127702
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We show that in electron-hole bilayers with excitonic orders arising from conduction and valence bands formed by atomic orbitals that have different parities, nonzero interlayer tunneling leads to a second-order Josephson effect. This means the interlayer electrical current is related to the phase of the excitonic order parameter as J = J(c) sin 2 theta instead of J = J(c) sin theta and that the system has two degenerate ground states at theta = 0, pi that can be switched by an interlayer voltage pulse. When generalized to a three dimensional stack of alternating electron-hole planes or a two dimensional stack of chains, the ac Josephson effect implies that electric field pulses perpendicular to the layers and chains can steer the order parameter phase between the two degenerate ground states, making these devices ultrafast memories. The order parameter steering also applies to the excitonic insulator candidate Ta2NiSe5.
引用
收藏
页数:6
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