Electron-beam introduction of heteroatomic Pt-Si structures in graphene

被引:34
作者
Dyck, Ondrej [1 ]
Zhang, Cheng [2 ]
Rack, Philip D. [1 ,2 ]
Fowlkes, Jason D. [1 ,2 ]
Sumpter, Bobby [1 ,3 ]
Lupini, Andrew R. [1 ]
Kalinin, Sergei, V [1 ]
Jesse, Stephen [1 ]
机构
[1] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37830 USA
[2] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA
[3] Oak Ridge Natl Lab, Computat Sci & Engn Div, Oak Ridge, TN USA
关键词
Dopant cluster assembly; Scanning transmission electron microscopy; Dopant insertion; Graphene; Atomic manipulation; ATOMIC-FORCE; ULTRASOFT PSEUDOPOTENTIALS; SINGLE ATOMS; MANIPULATION; FABRICATION; SCALE;
D O I
10.1016/j.carbon.2020.01.042
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Electron-beam (e-beam) manipulation of single dopant atoms in an aberration-corrected scanning transmission electron microscope is emerging as a method for directed atomic motion and atom-by-atom assembly. Until now, the dopant species have been limited to atoms closely matched to carbon in terms of ionic radius and capable of strong covalent bonding with carbon atoms in the graphene lattice. In situ dopant insertion into a graphene lattice has thus far been demonstrated only for Si, which is ubiquitously present as a contaminant in this material. Here, we achieve in situ manipulation of Pt atoms and their insertion into the graphene host matrix using the e-beam deposited Pt on graphene as a host system. We further demonstrate a mechanism for stabilization of the Pt atom, enabled through the formation of Si-stabilized Pt heteroatomic clusters attached to the graphene surface. This study provides evidence toward the universality of the e-beam assembly approach, opening a pathway for exploring cluster chemistry through direct assembly. (C) 2020 Published by Elsevier Ltd.
引用
收藏
页码:750 / 757
页数:8
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