Crystallization of hydrogenated amorphous silicon-carbon films by means of laser treatments

被引：10
作者：
Ambrosone, G
Coscia, U
Lettieri, S
Maddalena, P
Minarini, C
Parisi, V
Schutzmann, S
机构：
[1] Complesso Univ Monte S Angelo, INFM Coherentia, I-80126 Naples, Italy
[2] Complesso Univ Monte S Angelo, Dipartimento Sci Fis, I-80126 Naples, Italy
[3] ENEA, Res Ctr, I-80055 Naples, Italy
[4] Univ Roma La Sapienza, INFM, Dipartimento Med Sperimentale & Patol, I-00161 Rome, Italy
[5] Univ Roma Tor Vergata, Dipartimento Sci & Tecnol Chim, I-00133 Rome, Italy
来源：
APPLIED SURFACE SCIENCE | 2005年 / 247卷 / 1-4期
关键词：
silicon-carbon alloys; pulsed laser treatment; crystallization;
D O I：
10.1016/j.apsusc.2005.01.051
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Laser annealing of hydrogenated amorphous silicon-carbon films with carbon content, x = C/(C + Si), ranging from 0.08 to 0.28, deposited on Coming glass, has been carried out by a pulsed frequency doubled Nd:YAG (532 nm) laser and a pulsed KrF excimer (248 nm) laser using a fluence of 242 mJ/cm(2). The results show that the laser radiation of 532 nm induces in the samples only the growth of silicon crystallites and the degree of crystallinity decreases with increasing x. In the laser treated films at 248 nm, the degree of crystallinity is enhanced with x and cubic SiC crystallites are detectable in samples with x >= 0.18. Dark conductivity decreases with x for Nd:YAG laser treated films, while it is approximately constant for KrF laser treated ones. The effects of laser annealing on the crystallization process appear to be correlated with the optical properties of the as deposited films. (c) 2005 Elsevier B.V. All rights reserved.
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收藏
页码：471 / 476
页数：6
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