High-energy Cu and O ion co-implantation into silica glasses

被引:24
作者
Nakao, S [1 ]
Saitoh, K [1 ]
Ikeyama, M [1 ]
Niwa, H [1 ]
Tanemura, S [1 ]
Miyagawa, Y [1 ]
Miyagawa, S [1 ]
Tazawa, M [1 ]
Jin, P [1 ]
机构
[1] Natl Ind Res Inst Nagoya, Kita Ku, Nagoya, Aichi 462, Japan
关键词
colloids; glass; ion implantation;
D O I
10.1016/S0168-583X(98)00093-7
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Optical and structural changes of silica glass substrates implanted with Cu and O ions and subjected to thermal annealing, are examined as a function of the implantation sequence by optical absorption, Rutherford Backscattering Spectrometry (RBS) and thin film X-ray diffraction (XRD) measurements. Before annealing, the distribution of Cu is affected by the implantation sequence and O- followed by Cu-implantation leads to fewer Cu nanoparticles than the Cu- followed by O ion implantation. After annealing, however, the redistribution behavior of Cu and optical absorption features are similar for both co-implanted samples. Nanocrystals of Cu2O are mainly formed by annealing and the absorption peaks at about 340, 450 and 480 nm are observed for the co-implanted samples. The peaks are possibly evidence for the presence of the copper oxide nanocrystals. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:246 / 251
页数:6
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