Analytical solution and analysis of transient temperature of silicon irradiated by repetitive laser pulse

被引：3

作者：

Chen, Guibo ^{[1
]}

Zhang, Jiajia ^{[1
]}

Bi, Juan ^{[1
]}

机构：

[1] Changchun Univ Sci & Technol, Sch Sci, Changchun 130022, Peoples R China

来源：

OPTIK | 2017年 / 129卷

关键词：

Repetitive laser pulse; Temperature; Analytical solution; Silicon; SURFACE; DAMAGE; GAAS;

D O I：

10.1016/j.ijleo.2016.10.050

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper, the physical model of the temperature of silicon irradiated by repetitive laser pulse is established based on classical Fourier heat conduction theory, and the analytical solution of temperature are obtained by using Laplace transformation method. The temperature for different duty cycle, different pulse number and different location inside the material are simulated and analyzed. Effects of duty cycle, pulse number and location inside the material on the temperature are investigated. The results of this paper can provide some guidance for experiments and mechanism study of the interaction between repetitive laser pulse and solid material. (C) 2016 Elsevier GmbH. All rights reserved.

引用

页码：69 / 77

页数：9

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