Oxidation kinetics of overstoichiometric TiB2 thin films grown by DC magnetron sputtering

被引:30
作者
Dorri, Samira [1 ]
Palisaitis, Justinas [1 ]
Greczynski, Grzegorz [1 ]
Petrov, Ivan [1 ,2 ,3 ]
Birch, Jens [1 ]
Hultman, Lars [1 ]
Bakhit, Babak [1 ]
机构
[1] Linkoping Univ, Dept Phys IFM, Thin Film Phys Div, SE-58183 Linkoping, Sweden
[2] Univ Illinois, Dept Mat Sci, Mat Res Lab, Champaign, IL 61801 USA
[3] Natl Taiwan Univ Sci & Technol, Dept Mat Sci & Engn, Taipei 10607, Taiwan
基金
瑞典研究理事会;
关键词
Sputtering; Thin films; Titanium diboride(TiB2); Microstructure; Oxidation; HIGH-TEMPERATURE OXIDATION; MONOLITHIC TIB2; MECHANICAL-PROPERTIES; THERMAL-STABILITY; DIFFUSION BARRIER; RESISTANCE; ZRB2; ZIRCONIUM; BEHAVIOR; HARDNESS;
D O I
10.1016/j.corsci.2022.110493
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We systematically study the oxidation properties of sputter-deposited TiB2.5 coatings up to 700 C. Oxide-scale thickness dox increases linearly with time ta for 300, 400, 500, and 700 C, while an oxidation-protective behavior occurs with dox = 250 & BULL;t0.2a at 600 C. Oxide-layer's structure changes from amorphous to rutile/ anatase-TiO2 at temperatures & GE; 500 C. Abnormally low oxidation rate at 600 C is attributed to a highly dense columnar TiO2-sublayer growing near oxide/film interface with a top-amorphous thin layer, suppressing oxygen diffusion. A model is proposed to explain the oxide-scale evolution at 600 C. Decreasing heating rate to 1.0 C/ min plays a noticeable role in the TiB2.5 oxidation.
引用
收藏
页数:20
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