Deep Insights into the Failure Mechanisms in Field-cycled Ferroelectric Hf0.5Zr0.5O2 Thin Film: TDDB Characterizations and First-Principles Calculations

被引：58

作者：

Wei, Wei ^{[1
,2
]}

Zhang, Weiqiang ^{[1
]}

Wang, Fei ^{[1
]}

Ma, Xiaolei ^{[1
]}

Wang, Qianwen ^{[1
]}

Sang, Pengpeng ^{[1
]}

Zhan, Xuepeng ^{[1
]}

Li, Yuan ^{[1
]}

Tai, Lu ^{[1
,2
]}

Luo, Qing ^{[2
]}

Lv, Hangbing ^{[2
]}

Chen, Jiezhi ^{[1
]}

机构：

[1] Shandong Univ, Sch Informat Sci & Engn, Qingdao, Peoples R China

[2] Chinese Acad Sci, Key Lab Microelect Devices & Integrated Technol, Inst Microelect, Beijing, Peoples R China

来源：

2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2020年

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1109/IEDM13553.2020.9371932

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To address the failure mechanisms in ferroelectric devices, this work presents a systematical study on Hf0.5Zr0.5O2-based ferroelectric memory. Firstly, by detail electrical characterizations of P-V and C-V curves in fieldcycled devices, three dominant failure modes can be well distinguished. Then, by combining the TDDB measurements and first-principles calculations, it is found that, 1) the annealing temperature has large impacts on the initial defects concentrations while weakly affect the trap generation rate; 2) the breakdown paths take place mainly in the amorphous regions, which could generate reconfigurable filaments and cause RRAM properties; 3) temporary recovered ferroelectricity during cycling can be explained by considering the unstable breakdown paths generated at the grain boundary.

引用

页数：4

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