SONOS memories with embedded silicon nanocrystals in nitride

被引：8

作者：

Liu, Mei-Chun ^{[1
]}

Chiang, Tsung-Yu ^{[1
]}

Kuo, Po-Yi ^{[2
]}

Chou, Ming-Hong ^{[3
]}

Wu, Yi-Hong ^{[3
]}

You, Hsin-Chiang ^{[4
]}

Cheng, Ching-Hwa ^{[3
]}

Liu, Sheng-Hsien ^{[3
]}

Yang, Wen-Luh ^{[3
]}

Lei, Tan-Fu ^{[2
]}

Chao, Tien-Sheng ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Electrophys, Hsinchu, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30039, Taiwan

[3] Feng Chia Univ, Dept Elect Engn, Taichung 40724, Taiwan

[4] Univ E Asia, Dept Comp Sci & Informat Engn, Taichung, Taiwan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2008年 / 23卷 / 07期

关键词：

D O I：

10.1088/0268-1242/23/7/075033

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have successfully demonstrated SONOS memories with embedded Si-NCs in silicon nitride. This new structure exhibits excellent characteristics in terms of larger memory windows and longer retention time compared to control devices. Using the same thickness 2.5 nm of the bottom tunneling oxide, we found that N2O is better than O-2 oxide. Retention property is improved when the thickness of N2O is increased to 3.0 nm.

引用

页数：4

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