Intense vacuum ultraviolet emission at 172 nm from LaF3:Nd3+ crystals

被引：3

作者：

Sarantopoulou, E ^{[1
]}

Kollia, Z ^{[1
]}

Cefalas, AC ^{[1
]}

机构：

[1] Natl Hellen Res Fdn, Inst Theoret & Phys Chem, GR-11635 Athens, Greece

来源：

MICROELECTRONIC ENGINEERING | 2001年 / 57-8卷

关键词：

vacuum ultraviolet; deep-UV photolithography; dielectric crystals; trivalent rate earth ions;

D O I：

10.1016/S0167-9317(01)00439-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Intense vacuum ultraviolet (VUV) radiation from 168 to 177 nm was obtained from a LaF3:Nd3+ crystal when it was excited with a molecular fluorine laser at 157 nm. VUV emission is due to the strong 4f(n-1)5d --> 4f(n) interconfigurational transitions of the Nd3+ ions. This work was motivated by the fact that the absorbances of most carbonated polymeric materials have just the right value of similar to 0.4 mum(-1) for lithographic imaging in the spectral region above 170 nm. In addition, the resist out-gassing is less in this spectral region in comparison to 157 run. The photon conversion efficiency from 157 to 168-177 nm by the LaF3:Nd3+ crystal depends strongly on the crystal purity. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：93 / 99

页数：7

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