Defect characterization in boron implanted silicon after flash annealing

被引：0

作者：

Zhu, Lei ^{[1
]}

Chan, Jason ^{[2
]}

McCoy, Steve ^{[2
]}

Gelpey, Jeff ^{[2
]}

Guo, Baonian ^{[3
]}

Shim, Kyuha ^{[3
]}

Theodore, N. David ^{[4
]}

Martin, Michael ^{[1
]}

Carter, Jesse ^{[1
]}

Hollander, Mark ^{[1
]}

Shao, Lin ^{[1
]}

机构：

[1] Texas A&M Univ, Dept Nucl Engn, College Stn, TX 77843 USA

[2] Mattson Technol Canada, Vancouver, BC V6P 6T7, Canada

[3] Varian Semicond Equipment Associates Inc, Gloucester, MA 01930 USA

[4] Freescale Semicond Inc, Wireless & Packaging Syst Lab, Tempe, AZ 85284 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2008年 / 266卷 / 10期

关键词：

shallow junction; doping; boron; annealing;

D O I：

10.1016/j.nimb.2008.03.036

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Flash-assisted rapid thermal processing (fRTP) has gained considerable interests for fabrication of ultra-shallow junction in silicon. fRTP can significantly reduce boron diffusion, while attaining boron activation at levels beyond the limits of traditional rapid thermal annealing. The efficiency of fRTP for defect annealing, however, needs to be systematically explored. In this study, a (10 0) silicon wafer was implanted with 500 eV boron ions to a fluence of 1 x 10(15) cm(-2). fRTP was performed with peak temperatures ranging from 1100 degrees C to 1300 degrees C for approximately one milli-second. High resolution transmission electron microscopy and secondary ion mass spectrometry were performed to characterize as-implanted and annealed samples. The study shows that fRTP at 1250 degrees C can effectively anneal defects without causing boron tail diffusion. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2479 / 2482

页数：4

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