Source-gated transistors in poly-silicon

被引：12

作者：

Shannon, JM ^{[1
]}

Dovinos, D

Balon, F

Glasse, C

Brotherton, SD

机构：

[1] Univ Surrey, Sch Elect & Phys Sci, Adv Technol Inst, Guildford GU2 7XH, Surrey, England

[2] Philips Res Labs, Redhill RH1 5HA, Surrey, England

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 10期

基金：

英国工程与自然科学研究理事会;

关键词：

poly-silicon (poly-Si); Schottky barriers; semiconductor devices; thin-film transistors (TFTs);

D O I：

10.1109/LED.2005.855404

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Source-gated transistors (SGTs) have been made in thin layers of polysilicon formed by excimer laser crystallization of amorphous silicon. It is shown that the main features of the SGT, namely a low saturation voltage and high output impedance can be obtained in poly-silicon. Furthermore the nature of the source barrier enabled it to be pulled down by the influence of the gate to low values giving small activation energies for current transport and reduced temperature sensitivity in the on-state.

引用

页码：734 / 736

页数：3

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