Indium-doped ZnO nanospirals synthesized by thermal evaporation

被引:16
作者
Gao, Hong [1 ]
Ji, Hong [2 ]
Zhang, Xitian [3 ]
Lu, Huiqing [3 ]
Liang, Yao [4 ]
机构
[1] Jilin Univ, Coll Phys, Changchun 130012, Peoples R China
[2] Harbin Normal Univ, Dept Phys, Harbin 150080, Peoples R China
[3] Harbin Normal Univ, Dept Phys, Harbin 150080, Peoples R China
[4] Chinese Univ Hong Kong, Dept Phys, Shatin, Hong Kong, Peoples R China
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2008年 / 26卷 / 02期
基金
中国国家自然科学基金;
关键词
D O I
10.1116/1.2889418
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Indium-doped ZnO nanospirals were synthesized by one-step thermal evaporation. Transmission electron micrographs show that the nanospirals are structurally uniform and free of defects. The helical nanostructures, which are constructed by rolling nanobelts grown along the < 10 (1) over bar0 > direction with the +/-(0001) polar planes as the dominate surfaces, are energetically favored in terms of the electrostatic polar charge model. The typical radius of curvature of the nanospirals is several micrometers. The In-doped nanospirals are expected to have interesting optoelectronic and mechanical properties and could be potential building blocks in nanoscale optoelectronic and electromechanical systems. (C) 2008 American Vacuum Society.
引用
收藏
页码:585 / 588
页数:4
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