Tight-binding computation of the STM image of carbon nanotubes

被引:117
|
作者
Meunier, V [1 ]
Lambin, P [1 ]
机构
[1] Fac Univ Notre Dame Paix, Dept Phys, B-5000 Namur, Belgium
关键词
D O I
10.1103/PhysRevLett.81.5588
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
STM imaging of single-wall carbon nanotubes has recently been achieved with atomic resolution, revealing the chirality of the carbon network. In this work, a theoretical modeling of scanning tunneling microscopy of the nanotubes is presented, based on a tight-binding pi-electron Hamiltonian. This theory is simple enough to be used routinely for the computation of STM images and current-voltage characteristics, making it possible to investigate specific effects of the network curvature and topology such as a pentagon-heptagon pair defect.
引用
收藏
页码:5588 / 5591
页数:4
相关论文
共 50 条
  • [1] Tight-binding description of the STM image of molecular chains
    Calev, Y
    Cohen, H
    Cuniberti, G
    Nitzan, A
    Porath, D
    ISRAEL JOURNAL OF CHEMISTRY, 2004, 44 (1-3) : 133 - 143
  • [2] Theoretical STM images of carbon nanotubes with atomic vacancies: A systematic tight-binding study
    Krasheninnikov, AV
    PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 2000, 11 : 1 - 23
  • [3] Localization in carbon nanotubes within a tight-binding model
    Kostyrko, T
    Bartkowiak, M
    Mahan, GD
    PHYSICAL REVIEW B, 1999, 60 (15) : 10735 - 10738
  • [4] Exact solutions to the tight-binding model for the conductance of carbon nanotubes
    Choi, HJ
    Ihm, J
    SOLID STATE COMMUNICATIONS, 1999, 111 (07) : 385 - 390
  • [5] Tight-binding model for carbon nanotubes from ab initio calculations
    Correa, J. D.
    da Silva, Antonio J. R.
    Pacheco, M.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2010, 22 (27)
  • [6] Extended tight-binding potential for modelling intertube interactions in carbon nanotubes
    Carlson, A.
    Dumitrica, T.
    NANOTECHNOLOGY, 2007, 18 (06)
  • [7] Tight-Binding Vibrational Analysis of Single-Wall Carbon Nanotubes
    Beu, Titus A.
    Farcas, Alexandra
    TIM14 PHYSICS CONFERENCE: PHYSICS WITHOUT FRONTIERS, 2015, 1694
  • [8] Structure and electronic states of capped carbon nanotubes by a tight-binding approach
    Kasahara, Y
    Tamura, R
    Tsukada, M
    PHYSICAL REVIEW B, 2003, 67 (11)
  • [9] Tight-binding description of the silicon carbide nanotubes
    Chegel, Raad
    JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 695 : 540 - 548
  • [10] Reflection by defects in a tight-binding model of nanotubes
    Kostyrko, T
    Bartkowiak, M
    Mahan, GD
    PHYSICAL REVIEW B, 1999, 59 (04): : 3241 - 3249