Epitaxial Growth of Crystalline Polyaniline on Reduced Graphene Oxide

被引：25

作者：

Majumdar, Dipanwita ^{[1
]}

Baskey, Moni ^{[1
]}

Saha, Shyamal K. ^{[1
]}

机构：

[1] Indian Assoc Cultivat Sci, Dept Mat Sci, Kolkata 700032, India

来源：

MACROMOLECULAR RAPID COMMUNICATIONS | 2011年 / 32卷 / 16期

关键词：

conjugated polymers; growth; nanocomposites; polyaniline; surfaces; P-N-JUNCTION; ULTRASONIC IRRADIATION; DOPED POLYANILINE; POLYMERIZATION; CONDUCTIVITY; NANORIBBONS; OXIDATION; SHEETS; ACID;

D O I：

10.1002/marc.201100292

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

Due to its unique electronic properties, graphene has already been identified as a promising material for future carbon based electronics. To develop graphene technology, the fabrication of a high quality P-N junction is a great challenge. Here, we describe a general technique to grow single crystalline polyaniline (PANI) films on graphene sheets using in situ polymerization via the oxidation-reduction of aniline monomer and graphene oxide, respectively, to fabricate a high quality P-N junction, which shows diode-like behavior with a remarkably low turn-on voltage (60 mV) and high rectification ratio (1880: 1) up to a voltage of 0.2 V. The origin of these superior electronic properties is the preferential growth of a highly crystalline PANI film as well as lattice matching between the d-values [similar to 2.48 angstrom] of graphene and {120} planes of PANI.

引用

页码：1277 / 1283

页数：7

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