XRD, ESCA and C-V investigations of Al2O3 SiO2 composite thin films synthesized by high dose oxygen ion implantation

被引：5

作者：

Dubey, SK ^{[1
]}

Yadav, AD ^{[1
]}

机构：

[1] Univ Mumbai, Dept Phys, Mumbai 400098, India

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1998年 / 143卷 / 04期

关键词：

ion-implantation; Al2O3 center dot SiO2 composite thin film; XRD; ESCA; MOS; C-V;

D O I：

10.1016/S0168-583X(98)00335-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

High purity aluminium (99.999%) films were deposited onto cleaned silicon substrates. 30 keV O-16(2)+ ions were implanted in Al-Si system with dose levels varying from 1 x 10(17) to 7 x 10(17) O-2(+) cm(-2). X-ray diffraction(XRD) studies reveal the formation of alpha-Al2O3 phase at all doses and gamma-Al2O3 and SiO2 phases only for high dose implants. ESCA studies for Al-2p3/2 and Si-2p lines at various depths confirm the formation of Al2O3 at all doses and the gradual chemical transformation of the SiOx towards the stoichiometric composition of SiO2 with implanted oxygen dose. The interface-state density of Al2O3 . SiO2-Si MOS device shows approximately U shape distribution with a discrete peak at <0.4 eV above the valence band edge. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：493 / 498

页数：6

共 28 条

[1] FORMATION OF DOUBLE DIELECTRIC LAYERS (AL2O3/SIO2) ON SILICON BY DC PLASMA ANODIZATION [J].

BECK, RB ;

JAKUBOWSKI, A .

THIN SOLID FILMS, 1982, 97 (01) :63-67

[2]

Dearnaley G., 1973, Ion Implantation

[3]

DOTHANH D, 1983, INSULATING FILMS SEM, P204

[4]

Dubey S. K., 1991, Indian Journal of Physics, Part A, V65A, P428

[5]

DUBEY SK, 1992, P SOC PHOTO-OPT INS, V1523, P314, DOI 10.1117/12.56979

[6]

DUBEY SK, 1990, SOLID STATE PHYS C, V33, P421

[7]

DUBEY SK, 1991, SOLID STATE PHYS C, V34, P459

[8]

DUBEY SK, 1991, INDIAN J PHYS PT-A, V65, P435

[9]

DUBEY SK, 1989, IVS B, V20, P9

[10]

DUBEY SK, 1991, IVS B, V22, P21

← 1 2 3 →