Spectroscopic ellipsometry studies of buried CoSi2 layers in Si formed by ion implantation with a metal vapor vacuum arc ion source

Co ion implantation into Si substrate with a metal vapor vacuum are (MEWA) ion source has been studied by spectroscopic ellipsometry (SE) over the wavelength range of 400-2000 nm. A series of samples synthesized at different substrate temperatures during implantation (T-S) and then post-annealed at the same conditions have been investigated. SE studies show that the buried CoSi2 layer shifts towards the surface and the surface roughness becomes thicker as T-S increases. Studies also show that, using MEVVA implantation, buried CoSi2 layers can be formed at relatively low T-S and relatively low annealing temperature. However, higher temperature annealing is essential for elimination of the damage in the top Si layer and formation of sharp interface. (C) 2000 Elsevier Science S.A. All rights reserved.