Dynamic hysteresis and scaling behavior in epitaxial antiferroelectric film

被引：28

作者：

Ge, Jun ^{[1
,2
,3
]}

Chen, Ying ^{[1
]}

Dong, Xianlin ^{[1
]}

Remiens, Denis ^{[2
,3
]}

Guo, Xin ^{[1
]}

Cao, Fei ^{[1
]}

Wang, Genshui ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China

[2] CNRS UMR 8520, IEMN DOAE MIMM, F-59655 Villeneuve Dascq, France

[3] Univ Valenciennes & Hainaut Cambresis, F-59313 Valenciennes 9, France

来源：

THIN SOLID FILMS | 2015年 / 584卷

关键词：

Dynamic hysteresis; Scaling behavior; Antiferroelectric film; ENERGY DENSITY; THIN-FILMS;

D O I：

10.1016/j.tsf.2015.01.033

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, we investigated the scaling behavior of dynamic hysteresis with frequency f and electric field E in epitaxial PbZrO3 antiferroelectric film on (111)-oriented SrTiO3 substrate. The scaling relation for the saturated hysteresis loops takes the form of hysteresis area < A > proportional to f(0.03)(E - 499)(0.20) at relatively low testing f. However, when frequency exceeds 30 Hz, the < A > shows stronger dependence on f while remains basically unchanged relation with E, leading to a form of < A > proportional to f(0.10)(E - 499)(0.20). The scaling behavior is modeled as occurring in a viscous medium where several forces, such as viscous and restoring forces, act on the phase transition process. (C) 2015 Elsevier B.V. All rights reserved.

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页码：108 / 111

页数：4

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