Direct observation of trap behaviors during degradation and breakdown evolution in highly stressed SiO2 films by conductive atomic force microscopy

被引：2
|
作者：
Zhang, L [1 ]
Mitani, Y [1 ]
机构：
[1] Toshiba Co Ltd, Corp Res & Dev Ctr, Adv LSI Technol Lab, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan
来源：
2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL | 2005年
关键词：
D O I：
10.1109/RELPHY.2005.1493162
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：600 / 601
页数：2
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