Improved Negative Differential Mobility Model of GaN and AlGaN for a Terahertz Gunn Diode

被引:33
作者
Yang, Lin-An [1 ]
Hao, Yue [1 ]
Yao, Qingyang [1 ]
Zhang, Jincheng [1 ]
机构
[1] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Peoples R China
关键词
AlGaN; GaN; Gunn diode; mobility model; ELECTRON-TRANSPORT CHARACTERISTICS; MONTE-CARLO; WURTZITE GAN; POWER;
D O I
10.1109/TED.2011.2105269
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents an improved negative differential mobility model for GaN and AlGaN to simulate GaN Gunn diodes at terahertz frequencies. Temperature-dependent parameters nu(sat), E-c, alpha, delta, and gamma are proposed to improve the accuracy of the mobility model at high temperatures. In particular, an Al-composition-related coefficient f(Z)(x) and a random-alloy-potential-related factor f(alloy)(p) are developed for an AlGaN mobility model. Simulation results show that notched doping GaN and AlGaN/GaN heterostructure Gunn diodes, both including 0.6-mu m transit and 0.2-mu m electron launching regions, have the capability of generating fundamental frequencies of 352-508 and 332-469 GHz, respectively, with a maximum radio-frequency (RF) power density of similar to 10(10) W/cm(3) and RF efficiency of over 2% accompanied with a shift of an oscillation mode from a dipole-domain mode toward an accumulation mode as the temperature rises from 300 to 500 K.
引用
收藏
页码:1076 / 1083
页数:8
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