Optical and electrical properties of highly nitrogen-doped ZnO thin films grown by plasma-assisted molecular beam epitaxy

被引：26

作者：

Jiao, Shujie ^{[1
]}

Lu, Youming ^{[1
]}

Zhang, Zhengzhong ^{[1
]}

Li, Binghui ^{[1
]}

Yao, Bin ^{[1
]}

Zhang, Jiying ^{[1
]}

Zhao, Dongxu ^{[1
]}

Shen, Dezhen ^{[1
]}

Fan, Xiwu ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130033, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 11期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2819367

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nitrogen-doped ZnO thin films with different nitrogen concentrations were fabricated by plasma-assisted molecular beam epitaxy. Hall effect measurements show p-type conduction for samples with low doping concentration. In highly doped ZnO, the p-type conduction converted to high resistance or unstable p-type behavior. This result indicates that highly doped samples are heavily compensated. In the low temperature photoluminescence spectrum, a donor-acceptor pair (DAP) emission band shows a strong redshift and broadening with increasing nitrogen doping concentration. The large shift of the DAP emission is explained by the Coulomb-potential fluctuation model related to compensated semiconductors. (c) 2007 American Institute of Physics.

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页数：4

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