A Highly Reliable Copper Nanowire/Nanoparticle Ink Pattern with High Conductivity on Flexible Substrate Prepared via a Flash Light-Sintering Technique

被引:132
作者
Joo, Sung-Jun [1 ]
Park, Sung-Hyeon [1 ]
Moon, Chang-Jin [1 ]
Kim, Hak-Sung [1 ,2 ]
机构
[1] Hanyang Univ, Dept Mech Convergence Engn, Seoul 133791, South Korea
[2] Hanyang Univ, Inst Nano Sci & Technol, Seoul 133791, South Korea
基金
新加坡国家研究基金会;
关键词
flash light sintering copper nanoparticles; copper nanowires; printed' electronics; reliability of electrode; INTENSE PULSED-LIGHT; TEMPERATURE; FILMS; NANOPARTICLES; COMPOSITES; ELECTRODES; NANOWIRES;
D O I
10.1021/am506765p
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this work, copper nanowires (NWs) and Cu nanoparticles (NPs) were employed to increase the reliability of a printed electrode pattern under mechanical bending fatigue. The fabricated Cu NW/NP inks with different weight fractions of Cu NWs were printed on a polyimide substrate and flash light-sintered within a few milliseconds at room temperature under ambient conditions. Then, 1000 cycles of outer and inner bending fatigue tests were performed using a lab-made fatigue tester. The flash light-sintered Cu NW/NP ink film with 5 wt % Cu NWs prepared under the flash light-sintering conditions (12.5 J center dot cm(2) irradiation energy, 10 ms pulse duration, and one pulse) showed a lower resistivity (22.77 mu O center dot cm) than those of the only Cu NPs and Cu NWs ink (94.01 mu O center dot cm and 104.15 mu O center dot cm, respectively). In addition, the resistance change (Delta R center dot R01) of the 5 wt % Cu NWs Cu NW/NP film was greatly enhanced to 4.19 compared to the 92.75 of the Cu NPs film obtained under mechanical fatigue conditions over 1000 cycles and an outer bending radius of 7 mm. These results were obtained by the densification and enhanced mechanical flexibility of flash light-sintered Cu NW/NP network, which resulted in prevention of crack initiation and propagation. To characterize the Cu NW/NP ink film, X-ray diffraction and scanning electron microscopy were used.
引用
收藏
页码:5674 / 5684
页数:11
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