Theoretical study on the scanning tunneling microscopy image of Cl-adsorbed Si(001)

被引：12
作者：
Fujimoto, Y [1 ]
Okada, H [1 ]
Inagaki, K [1 ]
Goto, H [1 ]
Endo, K [1 ]
Hirose, K [1 ]
机构：
[1] Osaka Univ, Dept Precis Sci & Technol, Suita, Osaka 5650871, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 08期
关键词：
scanning tunneling microscopy; first-principles calculation; silicon surface; chlorine atom; local density of states;
D O I：
10.1143/JJAP.42.5267
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An interpretation of the scanning tunneling microscopy (STM) image of a Cl-adsorbed Si(001) surface is reported based on first-principles calculations of its electronic structure. Front the analysis of the spatial distribution of the local density of states, we show that the STM image of this surface calculated under the Tersoff-Hamann approximation is in disagreement with the observed STM image. Some remarks associated with the discrepancy are given to further studies.
引用
收藏
页码：5267 / 5268
页数：2
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