Effect of Substrate Orientation on Critical Thickness of Cu Thin Films

被引：9

作者：

Pang, Na ^{[1
]}

Chen, Leng ^{[1
]}

机构：

[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China

来源：

ELECTRONIC MATERIALS LETTERS | 2011年 / 7卷 / 04期

基金：

中国国家自然科学基金;

关键词：

substrate orientation; critical thickness; misfit dislocation; Cu thin films; ELECTROMIGRATION; DEFECTS;

D O I：

10.1007/s13391-011-0170-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Based on the condition of dislocation formation, the present work calculated the critical thickness of Cu thin films on different orientations of the silicon substrate. The results show that critical thickness of Cu thin films is maximum in which the film-substrate interface is the {111} crystal plane and minimum in which the film-substrate interface is the {112} crystal plane. The effect of substrate orientation on critical thickness was discussed with theories of strain energy and interface energy.

引用

页码：359 / 363

页数：5

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