Time-dependent dielectric breakdown of plasma-exposed porous organosilicate glass

被引:33
|
作者
Nichols, M. T. [1 ,3 ]
Sinha, H. [1 ,3 ]
Wiltbank, C. A. [1 ,3 ]
Antonelli, G. A. [2 ]
Nishi, Y. [4 ]
Shohet, J. L. [1 ,3 ]
机构
[1] Univ Wisconsin, Plasma Proc & Technol Lab, Madison, WI 53706 USA
[2] Novellus Syst, Tualatin, OR 97062 USA
[3] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA
[4] Stanford Univ, Stanford, CA 94305 USA
基金
美国国家科学基金会;
关键词
VACUUM-ULTRAVIOLET SPECTRA; LOW-K; ABSOLUTE INTENSITIES; INTERLEVEL; FILMS; FAILURES;
D O I
10.1063/1.3693526
中图分类号
O59 [应用物理学];
学科分类号
摘要
Time-dependent dielectric breakdown (TDDB) is a major concern for low-k organosilicate dielectrics. To examine the effect of plasma exposure on TDDB degradation, time-to-breakdown measurements were made on porous SiCOH before and after exposure to plasma. A capillary-array window was used to separate charged particle and vacuum ultraviolet (VUV) photon bombardment. Samples exposed to VUV photons, and a combination of VUV photons and ion bombardment exhibited significant degradation in breakdown time. The samples exposed to VUV photons and ion bombardment showed more degradation in breakdown time in comparison to samples exposed to VUV photons alone. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3693526]
引用
收藏
页数:4
相关论文
共 50 条
  • [1] Time-dependent dielectric breakdown measurements of porous organosilicate glass using mercury and solid metal probes
    Pei, Dongfei
    Nichols, Michael T.
    King, Sean W.
    Clarke, James S.
    Nishi, Yoshio
    Shohet, J. Leon
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2014, 32 (05):
  • [2] The effect of vacuum ultraviolet irradiation on the time-dependent dielectric breakdown of organosilicate dielectrics
    Pei, D.
    Xue, P.
    Li, W.
    Guo, X.
    Lin, Y. H.
    Fung, H. S.
    Chen, C. C.
    Nishi, Y.
    Shohet, J. L.
    APPLIED PHYSICS LETTERS, 2016, 109 (12)
  • [3] Time-dependent dielectric breakdown characterizations of interlayer dielectric damage induced during plasma processing
    Shinohara, Kengo
    Nishida, Kentaro
    Ono, Kouichi
    Eriguchi, Koji
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (06)
  • [4] Time-dependent dielectric breakdown of HfAlOx/SiON gate dielectric
    Torii, K
    Kawahara, T
    Mitsuhashi, R
    Ohji, H
    Mutoh, A
    Miyazaki, S
    Kitajima, H
    Arikado, T
    ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2004, : 93 - 96
  • [5] INVESTIGATION OF MULTIPLE SOFT BREAKDOWN DURING TIME-DEPENDENT DIELECTRIC BREAKDOWN
    Wu, Qiwei
    Yin, Binfeng
    Zhou, Ke
    Wang, Jiong
    Gao, Jinde
    2017 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC 2017), 2017,
  • [6] Modeling time-dependent dielectric breakdown with and without barriers
    Plawsky, Joel L.
    Gill, William N.
    Achanta, Ravi S.
    JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2010, 9 (04):
  • [7] Modeling time-dependent dielectric breakdown with and without barriers
    Plawsky, J. L.
    Gill, W. N.
    Achanta, R. S.
    RELIABILITY, PACKAGING, TESTING, AND CHARACTERIZATION OF MEMS/MOEMS AND NANODEVICES IX, 2010, 7592
  • [8] TEMPERATURE ACCELERATION OF TIME-DEPENDENT DIELECTRIC-BREAKDOWN
    MOAZZAMI, R
    LEE, JC
    HU, CM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (11) : 2462 - 2465
  • [9] Modeling of time-dependent dielectric breakdown in copper metallization
    Wu, W
    Duan, XD
    Yuan, JS
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2003, 3 (02) : 26 - 30
  • [10] A Multiphysics Time-Dependent Model of Dielectric Breakdown in Solids
    Wildman, Raymond A.
    Gazonas, George A.
    2018 INTERNATIONAL APPLIED COMPUTATIONAL ELECTROMAGNETICS SOCIETY SYMPOSIUM (ACES), 2018,