Defect structure and martensitic transformation crystallography in Ni2MnGa alloy

被引:0
作者
Wei, Zhaozhao [1 ]
Ma, Xiao [1 ]
Zhang, Xin-Ping [1 ]
机构
[1] S China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Peoples R China
来源
FUNCTIONAL AND ELECTRONIC MATERIALS | 2011年 / 687卷
关键词
Defect structure; martensitic interface; transformation crystallography; Ni2MnGa alloy; INTERFACES; DISLOCATIONS;
D O I
10.4028/www.scientific.net/MSF.687.463
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ferromagnetic shape memory alloys can produce large strains in a magnetic field by twin boundary motion. The mobility of parent-martensite inter-phase interfaces and twin-twin inter-variant boundaries is closely related to their interfacial structures and the mechanism of migration, therefore a thorough understanding of its nature is of importance. A physical model of the structure of parent-martensite interface has been developed recently based on dislocation theories and topological arguments. On the basis of the topological model, the present work performs a theoretical study of the defect structure of the martensitic interface, and the transformation crystallography in Ni2MnGa alloy. The habit plane, i.e., the parent-martensite interface plane was determined to be (-0.761, -0.054, -0.646)(P) for the parent crystal index frame, and (-0.818, 0.067, -0.571)(M) for the martensite frame. The habit plane inclination angle is 5.945 degrees and 5.953 degrees with respect to the terrace plane in the parent and martensite crystals, respectively.
引用
收藏
页码:463 / 466
页数:4
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