Stretching and Breaking of Ultrathin MoS2

被引：2293

作者：

Bertolazzi, Simone ^{[1
]}

Brivio, Jacopo ^{[1
]}

Kis, Andras ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Elect Engn, CH-1015 Lausanne, Switzerland

来源：

ACS NANO | 2011年 / 5卷 / 12期

基金：

瑞士国家科学基金会;

关键词：

two-dimensional materials; dichalcogenides; MoS2; AFM; mechanical properties; SINGLE-LAYER MOS2; MECHANICAL-BEHAVIOR; MONOLAYER; NANOTUBES; STRENGTH; TENSION;

D O I：

10.1021/nn203879f

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on measurements of the stiffness and breaking strength of monolayer MoS2, a new semiconducting analogue of graphene. Single and bilayer MoS2 is exfoliated from bulk and transferred to a substrate containing an array of microfabricated circular holes. The resulting suspended, free-standing membranes are deformed and eventually broken using an atomic force microscope. We find that the In-plane stiffness of monolayer MoS2 is 180 +/- 60 Nm(-1), corresponding to an effective Young's modulus of 270 +/- 100 GPa, which Is comparable to that of steel. Breaking occurs at an effective strain between 6 and 11% with the average breaking strength of 15 +/- 3 Nm(-1) (23 GPa). The strength of strongest monolayer membranes Is 11% of its Young's modulus, corresponding to the upper theoretical limit which indicates that the material can be highly crystalline and almost defect-free. Our results show that monolayer MoS2 could be suitable for a variety of applications such as reinforcing elements in composites and for fabrication of flexible electronic devices.

引用

页码：9703 / 9709

页数：7

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