The Kondo effect and coherent transport in stacking-faults-free wurtzite InAs nanowires

被引：0

作者：

Kretinin, Andrey V. ^{[1
]}

Popovitz-Biro, Ronit ^{[2
]}

Mahalu, Diana ^{[1
]}

Oreg, Yuval ^{[1
]}

Heiblum, Moty ^{[1
]}

Shtrikman, Hadas ^{[1
]}

机构：

[1] Weizmann Inst Sci, Condensed Matter Dept, IL-76100 Rehovot, Israel

[2] Weizmann Inst Sci, Microscopy Unit, IL-76100 Rehovot, Israel

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

关键词：

InAs nanowires; molecular-beam epitaxy; coherent electron transport; Kondo effect; Fabry-Perot conductance oscillations; NANOTUBES;

D O I：

10.1063/1.3666386

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The crystalline perfection of wurtzite InAs nanowires grown by the Vapor-Liquid-Solid Molecular Beam Epitaxy technique in combination with careful fabrication of nanowire-based FET devices allowed us to observe a variety of phenomena associated with mesoscopic coherent transport. When the single nanowire channel is nearly pinched-off the Coulomb blockade conductance oscillations exhibit well-pronounced Kondo effect approaching the conductance unitary limit. At some gate voltages the breaking of odd-even parity of the Kondo effect related to the formation of the triplet ground state is observed. At higher gate voltages when the channel is open we observe the Fabry-Perot type conductance oscillations. The length of the Fabry-Perot electron resonator deduced from the period of the oscillations is in agreement with the physical length of the nanowire device.

引用

页数：2

共 14 条

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