High-power 745-nm Laser Diode Utilizing InP/InGaP Quantum Structures Grown by Using Migration Enhanced Epitaxy

被引:5
作者
Ha, S. K. [1 ]
Song, J. D. [1 ]
Han, I. K. [1 ]
Ko, D. Y. [2 ]
Kim, S. Y. [2 ]
Lee, E. H. [3 ]
机构
[1] Korea Inst Sci & Technol, Nanophoton Res Ctr, Seoul 136791, South Korea
[2] Hanyang Univ, Div Elect & Comp Engn, Seoul 133791, South Korea
[3] Yonsei Univ, Dept Phys, Seoul 120749, South Korea
关键词
Quantum dots; Quantum dashes; Laser diodes; DOT LASERS; NM; WAVELENGTH; PERFORMANCE; INAS;
D O I
10.3938/jkps.59.3089
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report the performance of 745-nm laser diodes (LDs) utilizing InP/InGaP quantum structures (quantum dots + quantum dashes) grown by using migration-enhanced epitaxy method. The photoluminescence of the LD structures before the fabrication of the LDs shows two peaks, around 800 nm and 750 nm, attributed to quantum dots and dashes, respectively. The lasing wavelength is thought to the result from quantum dashes instead of ground states of QDs. The pulse optical power of the LD is above 600 mW at room temperature.
引用
收藏
页码:3089 / 3092
页数:4
相关论文
共 14 条
[1]   Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001) [J].
Brault, J ;
Gendry, M ;
Grenet, G ;
Hollinger, G ;
Olivares, J ;
Salem, B ;
Benyattou, T ;
Bremond, G .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (01) :506-510
[2]   High-power quantum dot lasers with improved temperature stability of emission wavelength for uncooled pump sources [J].
Deubert, S ;
Debusmann, R ;
Reithmaier, JP ;
Forchel, A .
ELECTRONICS LETTERS, 2005, 41 (20) :1125-1127
[3]   Self-assembling InAs and InP quantum dots for optoelectronic devices [J].
Eberl, K ;
Lipinski, M ;
Manz, YM ;
Jin-Phillipp, NY ;
Winter, W ;
Lange, C ;
Schmidt, OG .
THIN SOLID FILMS, 2000, 380 (1-2) :183-188
[4]   Small-signal modulation characteristics of p-doped 1.1- and 1.3-μm quantum-dot lasers [J].
Fathpour, S ;
Mi, ZT ;
Bhattacharya, P .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (11) :2250-2252
[5]   Continuous-wave low-threshold performance of 1.3-μm InGaAs-GaAs quantum-dot lasers [J].
Huffaker, DL ;
Park, G ;
Zou, ZZ ;
Shchekin, OB ;
Deppe, DG .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2000, 6 (03) :452-461
[6]   740 nm InP/GaInP quantum-dot laser with 190 A cm-2 room temperature threshold current density [J].
Lutti, J ;
Smowton, PM ;
Lewis, GM ;
Krysa, AB ;
Roberts, JS ;
Houston, PA ;
Xin, YC ;
Li, Y ;
Lester, LF .
ELECTRONICS LETTERS, 2005, 41 (05) :247-248
[7]   Rapid shifted excitation Raman difference spectroscopy with a distributed feedback diode laser emitting at 785 nm [J].
Maiwald, M. ;
Erbert, G. ;
Klehr, A. ;
Kronfeldt, H. -D. ;
Schmidt, H. ;
Sumpf, B. ;
Traenkle, G. .
APPLIED PHYSICS B-LASERS AND OPTICS, 2006, 85 (04) :509-512
[8]  
Mikhail V. M., 1997, JPN J APPL PHYS, V36, P4221
[9]   HIGH-POWER OPERATION OF ALGAAS SQW-SCH BROAD-AREA LASER-DIODES FOR ND-YAG SOLID-STATE LASER PUMPING [J].
NAGAI, Y ;
SHIGIHARA, K ;
TAKAMI, A ;
KARAKIDA, S ;
KOKUBO, Y ;
TADA, A .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (02) :97-99
[10]   InP based lasers and optical amplifiers with wire-/dot-like active regions [J].
Reithmaier, JP ;
Somers, A ;
Deubert, S ;
Schwertberger, R ;
Kaiser, W ;
Forchel, A ;
Calligaro, M ;
Resneau, P ;
Parillaud, O ;
Bansropun, S ;
Krakowski, M ;
Alizon, R ;
Hadass, D ;
Bilenca, A ;
Dery, H ;
Mikhelashvili, V ;
Eisenstein, G ;
Gioannini, M ;
Montrosset, I ;
Berg, TW ;
van der Poel, M ;
Mork, J ;
Tromborg, B .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2005, 38 (13) :2088-2102