High-power 745-nm Laser Diode Utilizing InP/InGaP Quantum Structures Grown by Using Migration Enhanced Epitaxy

被引：5

作者：

Ha, S. K. ^{[1
]}

Song, J. D. ^{[1
]}

Han, I. K. ^{[1
]}

Ko, D. Y. ^{[2
]}

Kim, S. Y. ^{[2
]}

Lee, E. H. ^{[3
]}

机构：

[1] Korea Inst Sci & Technol, Nanophoton Res Ctr, Seoul 136791, South Korea

[2] Hanyang Univ, Div Elect & Comp Engn, Seoul 133791, South Korea

[3] Yonsei Univ, Dept Phys, Seoul 120749, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2011年 / 59卷 / 05期

关键词：

Quantum dots; Quantum dashes; Laser diodes; DOT LASERS; NM; WAVELENGTH; PERFORMANCE; INAS;

D O I：

10.3938/jkps.59.3089

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the performance of 745-nm laser diodes (LDs) utilizing InP/InGaP quantum structures (quantum dots + quantum dashes) grown by using migration-enhanced epitaxy method. The photoluminescence of the LD structures before the fabrication of the LDs shows two peaks, around 800 nm and 750 nm, attributed to quantum dots and dashes, respectively. The lasing wavelength is thought to the result from quantum dashes instead of ground states of QDs. The pulse optical power of the LD is above 600 mW at room temperature.

引用

页码：3089 / 3092

页数：4

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