Landau Quantization and the Thickness Limit of Topological Insulator Thin Films of Sb2Te3

被引：191

作者：

Jiang, Yeping ^{[1
,2
]}

Wang, Yilin ^{[1
]}

Chen, Mu ^{[1
,2
]}

Li, Zhi ^{[1
]}

Song, Canli ^{[1
,2
]}

He, Ke ^{[1
]}

Wang, Lili ^{[1
]}

Chen, Xi ^{[2
]}

Ma, Xucun ^{[1
]}

Xue, Qi-Kun ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[2] Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Dept Phys, Beijing 100084, Peoples R China

来源：

PHYSICAL REVIEW LETTERS | 2012年 / 108卷 / 01期

基金：

美国国家科学基金会;

关键词：

SINGLE DIRAC CONE; SURFACE-STATES; BI2TE3; GRAPHENE; BI2SE3;

D O I：

10.1103/PhysRevLett.108.016401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the experimental observation of Landau quantization of molecular beam epitaxy grown Sb2Te3 thin films by a low-temperature scanning tunneling microscope. Different from all the reported systems, the Landau quantization in a Sb2Te3 topological insulator is not sensitive to the intrinsic substitutional defects in the films. As a result, a nearly perfect linear energy dispersion of surface states as a 2D massless Dirac fermion system is achieved. We demonstrate that four quintuple layers are the thickness limit for a Sb2Te3 thin film being a 3D topological insulator. The mechanism of the Landau-level broadening is discussed in terms of enhanced quasiparticle lifetime.

引用

页数：5

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