CHARACTERISTICS OF Bi2S3 THIN FILMS DEPOSITED BY A NOVEL METHOD

被引：0
|
作者：
Rajalakshmi, P. Usha [1 ]
Oommen, Rachel [1 ]
Sanjeeviraja, C. [2 ]
机构：
[1] Avinashilingam Deemed Univ Women, Dept Phys, Coimbatore 641043, Tamil Nadu, India
[2] Alagappa Univ, Sch Phys, Karaikkudi 630003, Tamil Nadu, India
来源：
CHALCOGENIDE LETTERS | 2011年 / 8卷 / 11期
关键词：
Bi2S3; Thin films; Nebulised spray pyrolysis; Band gap; Resistivity; OPTICAL-PROPERTIES; SULFIDE; EVAPORATION;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin films of bismuth sulphide (Bi2S3) are deposited by a novel nebulised spray pyrolysis technique. The deposited films are characterized by X-ray diffraction, Scanning Electron Microscopy, EDAX, UV-Vis. Spectroscopy. Electrical and photoelectrochemical properties of the films are analysed by four probe resistivity and C-V measurements respectively. As-deposited films are amorphous and annealing of the films is found to improve the crystallinity of the film. Optical transitions involved in the material are found to be direct and allowed. The films recorded a room temperature resistivity of 20 Omega-m.
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页码：683 / 687
页数：5
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