Auger recombination via deep energy levels as a potential cause of efficiency droop in InGaN/GaN LEDs

被引：0

作者：

Karpova, A. A. ^{[1
,2
]}

Samosvat, D. M. ^{[2
]}

Zegrya, G. G. ^{[1
,2
]}

机构：

[1] ITMO Univ, 49 Kronverksky Pr, St Petersburg 197101, Russia

[2] Ioffe Inst, 26 Politekh Skaya St, St Petersburg 194021, Russia

来源：

METANANO 2019 | 2020年 / 1461卷

关键词：

CHALLENGES;

D O I：

10.1088/1742-6596/1461/1/012061

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In the present work a mechanism of nonradiative radiation via deep energy levels is considered for InGaN/GaN LEDs from the first principles. The coefficient and time of such Auger recombination are evaluated numerically and are shown to be enough for causing the efficiency droop in blue and green InGaN/GaN LEDs.

引用

页数：4

共 28 条

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