Optimization of 5V power devices based on CMOS for hot-carrier degradation

被引：0

作者：

Nakamura, K ^{[1
]}

Naka, T ^{[1
]}

Matsushita, K ^{[1
]}

Matsudai, T ^{[1
]}

Yasuhara, N ^{[1
]}

Endo, K ^{[1
]}

Suzuki, F ^{[1
]}

Nakagawa, A ^{[1
]}

机构：

[1] Toshiba Co Ltd, Semicond Co, Discrete Semicond Div, Saiwai Ku, Kawasaki, Kanagawa 2128583, Japan

来源：

PROCEEDINGS OF THE 17TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose "power CMOS," suitable for use as large current output devices. The proposed structure can be fabricated by low cost 0.6um logic CMOS process and assures long-term reliability even under the stress of hot-electrons. The developed power CMOS have achieved low specific on resistances of 8.1m Omega mm(2) for NMOS and 21.1 m Omega mm(2) for PMOS.

引用

页码：335 / 338

页数：4

共 50 条

[1] IMPROVEMENT OF HOT-CARRIER DEGRADATION IN COOLED CMOS
AOKI, M
SHIMOHIGASHI, K
YANO, K
MASUHARA, T
1989 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1989, : 81 - 82
[2] Impact of STI Stress on Hot Carrier Degradation in 5V NMOSFET
Jiang, Hao
Yap, Hin Kiong
Pandey, Shesh Mani
Park, Jae Soo
Lim, James
Zeng, Xu
2011 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT (IRW), 2011, : 94 - 97
[3] ANALYZING HOT-CARRIER EFFECTS ON COLD CMOS DEVICES
BIBYK, SB
WANG, H
BORTON, P
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (01) : 83 - 88
[4] Effects of hot-carrier degradation in analog CMOS circuits
Thewes, R
Weber, W
MICROELECTRONIC ENGINEERING, 1997, 36 (1-4) : 285 - 292
[5] Effects of hot-carrier degradation in analog CMOS circuits
Siemens Corporate R&D, Munich, Germany
Microelectron Eng, 1-4 (285-292):
[6] Devices' optimization against hot-carrier degradation in high voltage pLEDMOS transistor
Wu, Hong
Qian, Qinsong
Liu, Siyang
Sun, Weifeng
Shi, Longxing
MICROELECTRONICS RELIABILITY, 2010, 50 (08) : 1071 - 1076
[7] DYNAMIC EFFECTS IN HOT-CARRIER DEGRADATION RELEVANT FOR CMOS OPERATION
WEBER, W
BROX, M
MICROELECTRONICS AND RELIABILITY, 1993, 33 (11-12): : 1729 - 1736
[8] DYNAMIC EFFECTS IN HOT-CARRIER DEGRADATION RELEVANT FOR CMOS OPERATION
WEBER, W
BROX, M
MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 453 - 460
[9] CMOS hot-carrier degradation and device lifetime at cryogenic temperatures
WangRatkovic, J
Lacoe, RC
MacWilliams, KP
Song, M
1996 INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 1996, : 169 - 169
[10] Predictive and Efficient Modeling of Hot-Carrier Degradation in nLDMOS Devices
Sharma, Prateek
Tyaginov, Stanislav
Wimmer, Yannick
Rudolf, Florian
Rupp, Karl
Bina, Markus
Enichlmair, Hubert
Park, Jong-Mun
Ceric, Hajdin
Grasser, Tibor
2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), 2015, : 389 - 392

← 1 2 3 4 5 →