Luminescence distribution of Yb-doped Ca-α-SiAlON phosphors

被引：21

作者：

Dierre, B. ^{[1
,2
]}

Yuan, X. L. ^{[1
]}

Hirosaki, N. ^{[1
]}

Kimura, T. ^{[1
]}

Xie, R-J. ^{[1
]}

Sekiguchi, T. ^{[1
,2
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

[2] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

JOURNAL OF MATERIALS RESEARCH | 2008年 / 23卷 / 06期

关键词：

D O I：

10.1557/JMR.2008.0208

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Luminescence properties of Yb-doped Ca-alpha-SiAlON phosphors with composition of Ca1-xYbxSi12-(m+n)Alm+nOnN16-n were investigated by using cathodoluminescence (CL). The ratio of Yb to Ca was kept constant while the host lattice was changed by replacing m+n(Si-N) bonds with m(Al-N) and n(Al-O) bonds. The luminescence of these phosphors consists of three peaks in the ultraviolet (UV), green (VIS), and infrared (IR) regions, which are attributed to the emissions from secondary phases, Yb2+ and Yb3+, respectively. The UV emission depends on the Si/Al ratio: the UV peak is centered at 310 nm for the Si-rich mix and at 360 nm for the Al-rich mix. We have found that Yb exists in the divalent state in alpha-SiAlON and in the trivalent state in the secondary phases.

引用

页码：1701 / 1705

页数：5

共 24 条

[11]

Sekiguchi T, 2005, SCANNING, V27, P103

[12] Cathodoluminescence study of one-dimensional free-standing widegap-semiconductor nanostructures:: GaN nanotubes, Si3N4 nanobelts and ZnS/Si nanowires [J].

Sekiguchi, T ;

Hu, JQ ;

Bando, Y .

JOURNAL OF ELECTRON MICROSCOPY, 2004, 53 (02) :203-208

[13] Absorption spectra of rare-earth-doped alpha-sialon ceramics [J].

Shen, ZJ ;

Nygren, M ;

Halenius, U .

JOURNAL OF MATERIALS SCIENCE LETTERS, 1997, 16 (04) :263-266

[14] Some effects of oxygen impurities on AlN and GaN [J].

Slack, GA ;

Schowalter, LJ ;

Morelli, D ;

Freitas, JA .

JOURNAL OF CRYSTAL GROWTH, 2002, 246 (3-4) :287-298

[15] Review on electron stimulated surface chemical reaction mechanism for phosphor degradation [J].

Swart, H. C. ;

Terblans, J. J. ;

Coetsee, E. ;

Ntwaeaborwa, O. M. ;

Dhlamini, M. S. ;

Nieuwoudt, S. ;

Holloway, P. H. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2007, 25 (04) :917-921

[16] Luminescence properties of terbium-, cerium-, or europium-doped α-sialon materials [J].

van Krevel, JWH ;

van Rutten, JWT ;

Mandal, H ;

Hintzen, HT ;

Metselaar, R .

JOURNAL OF SOLID STATE CHEMISTRY, 2002, 165 (01) :19-24

[17] Highly efficient white-light-emitting diodes fabricated with short-wavelength yellow oxynitride phosphors [J].

Xie, RJ ;

Hirosaki, N ;

Mitomo, M ;

Takahashi, K ;

Sakuma, K .

APPLIED PHYSICS LETTERS, 2006, 88 (10)

[18] Strong green emission from α-SiAlON activated by divalent ytterbimn under blue light irradiation [J].

Xie, RJ ;

Hirosaki, N ;

Mitomo, M ;

Uheda, K ;

Suehiro, T ;

Xu, X ;

Yamamoto, Y ;

Sekiguchi, T .

JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (19) :9490-9494

[19] Optical properties of Eu2+ in α-SiAION [J].

Xie, RJ ;

Hirosaki, N ;

Mitomo, M ;

Yamamoto, Y ;

Suehiro, T ;

Sakuma, K .

JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (32) :12027-12031

[20] Photoluminescence of cerium-doped α-SiAlON materials [J].

Xie, RJ ;

Hirosaki, N ;

Mitomo, M ;

Yamamoto, Y ;

Suehiro, T ;

Ohashi, N .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2004, 87 (07) :1368-1370

← 1 2 3 →