Bonding rearrangement in amorphous silicon nitrides deposited by hot-wire chemical vapor deposition upon thermal annealing

被引：0

作者：

Mai, Y. ^{[1
]}

Verlaan, V. ^{[1
]}

van der Werf, C. H. M. ^{[1
]}

Houweling, Z. S. ^{[1
]}

Bakker, R. ^{[1
]}

Rath, J. K. ^{[1
]}

Schropp, R. E. I. ^{[1
]}

机构：

[1] Univ Utrecht, Fac Sci, Dept Phys & Astron, SID Phys Devices, NL-3508 TA Utrecht, Netherlands

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2008年 / 354卷 / 19-25期

关键词：

silicon; solar cells; photovoltaics; chemical vapor deposition; Rutherford backscattering; FT-IR measurements;

D O I：

10.1016/j.jnoncrysol.2007.10.057

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The bonding rearrangement upon thermal annealing of amorphous silicon nitride (a-SiNx:H) films deposited by hot-wire chemical vapor deposition was studied. A wide range of N/Si atom ratio between 0.5 and 1.6 was obtained for the a-SiNx:H sample series by varying the source gases ratio only. Evolutions of Si-N, Si-H and N-H bonds upon annealing were found to depend strongly on the N/Si atom ratio of the films. According to the above observations, we propose possible reaction pathways for bonding rearrangement in a-SiNx:H with different N/Si ratios. (c) 2008 Published by Elsevier B.V.

引用

页码：2372 / 2375

页数：4

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