Hydrogenic impurity states in zinc-blende InxGa1-xN/GaN in cylindrical quantum well wires

被引：22

作者：

Baser, P. ^{[1
]}

Elagoz, S. ^{[1
]}

Kartal, D. ^{[2
]}

Karki, H. D. ^{[1
]}

机构：

[1] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey

[2] Cumhuriyet Univ, Dept Elect & Elect Engn, TR-58140 Sivas, Turkey

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2011年 / 49卷 / 05期

关键词：

Quantum wires; Hydrogenic donor impurity; Binding energy; GALLIUM NITRIDE; GROWTH; ENERGY; INN; TRANSITION; PARALLEL; DONORS; GAN;

D O I：

10.1016/j.spmi.2011.02.003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Within the framework of effective-mass approximation, the binding energy of a hydrogenic donor impurity in zinc-blende (ZB) InxGa1-xN/GaN cylindrical quantum well wires (CQWWs) is investigated using variational procedures. Numerical results show that the ground-state donor binding energy E-b is highly dependent on the impurity position and the CQWWs structure parameters. The donor binding energy for a shallow donor impurity located at the center of the CQWWs is the largest. As the impurity position changes from the center of the wire to its edge, the donor binding energy gets smaller. Also, we have found that In concentration is a very important value to tailor the system, since the binding energies close to binding energy maxima are strongly dependent on In content. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：497 / 503

页数：7

共 29 条

[1] Growth and applications of Group III nitrides [J].