N-type current-voltage characteristics of manganites

被引:4
|
作者
Karpasyuk, V. K. [1 ]
Badelin, A. G. [1 ]
Smirnov, A. M. [1 ]
Sorokin, V. V. [1 ]
Evseeva, A. [1 ]
Doyutova, E. [1 ]
Shchepetkin, A. A. [2 ]
机构
[1] Astrakhan State Univ, 20A Tattischev Str, Astrakhan 414056, Russia
[2] RAS, Inst Met, Ural Div, Ekaterinburg 620016, Russia
来源
INTERNATIONAL CONFERENCE ON MAGNETISM (ICM 2009) | 2010年 / 200卷
关键词
TRANSITION;
D O I
10.1088/1742-6596/200/5/052026
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Experimental data are shown for ceramic samples of La-Sr manganites with substitution of Mn by Zn, containing 0.15, 0.17 or 0.19 f.u. of Mn4+ (under the condition that concentration of oxygen is stoichiometric). Bulk manganites were prepared by the traditional solid state reactions in air. All samples were single phase and crystallized in the orthorhombic structure. Dc I-V characteristics at different temperatures were measured without and with magnetic field, the strength of which was 9200 Oe. All I-V characteristics of manganites reveal the regions with negative differential resistance. The samples of La0.885Sr0.115Mn0.925Zn0.075O3 exhibit novel multi-peak N-type current-voltage characteristics, particularly regular in the presence of magnetic field.
引用
收藏
页数:4
相关论文
共 50 条
  • [41] Computational discovery of promising new n-type dopable ABX Zintl thermoelectric materials
    Gorai, Prashun
    Ganose, Alex
    Faghaninia, Alireza
    Jain, Anubhav
    Stevanovic, Vladan
    MATERIALS HORIZONS, 2020, 7 (07) : 1809 - 1818
  • [42] Dark-current reduction accompanied photocurrent enhancement in p-type MnO quantum-dot decorated n-type 2D-MoS2-based photodetector
    Pak, Y.
    Mitra, S.
    Alaal, N.
    Xin, B.
    Lopatin, S.
    Almalawi, D.
    Min, J. -W.
    Kim, H.
    Kim, W.
    Jung, G. -Y.
    Roqan, I. S.
    APPLIED PHYSICS LETTERS, 2020, 116 (11)
  • [43] Origin of the n-type and p-type conductivity of MoS2 monolayers on a SiO2 substrate
    Dolui, Kapildeb
    Rungger, Ivan
    Sanvito, Stefano
    PHYSICAL REVIEW B, 2013, 87 (16)
  • [44] The structural, magnetic and electronic properties of p-type and n-type doped monolayer WS2 systems
    Zhu, Yuan-Yan
    Zhang, Jian-Min
    SUPERLATTICES AND MICROSTRUCTURES, 2017, 112 : 619 - 627
  • [45] A simple chemical guide for finding novel n-type dopable Zintl pnictide thermoelectric materials
    Gorai, Prashun
    Goyal, Anuj
    Toberer, Eric S.
    Stevanovic, Vladan
    JOURNAL OF MATERIALS CHEMISTRY A, 2019, 7 (33) : 19385 - 19395
  • [46] Emergence of promising n-type thermoelectric material through conductive network and strong phonon softening
    Peter, Jipin
    Choudhary, Tanu
    Biswas, Raju K.
    JOURNAL OF MATERIALS CHEMISTRY C, 2024, 12 (28) : 10548 - 10561
  • [47] Conversion of p to n-type reduced graphene oxide by laser annealing at room temperature and pressure
    Bhaumik, Anagh
    Narayan, Jagdish
    JOURNAL OF APPLIED PHYSICS, 2017, 121 (12)
  • [48] Fabrication of n-Type GaN Layers by the Pulse Injection Method at 950°C for Intersubband Devices
    Yang, Jung-Seung
    Sodabanlu, Hassanet
    Sugiyama, Masakazu
    Nakano, Yoshiaki
    Shimogaki, Yukihiro
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (04) : H143 - H145
  • [49] Controllable n-type doping in WSe2 monolayer via construction of anion vacancies
    Wang, Mengchen
    Wang, Wenhui
    Zhang, Yong
    Liu, Xing
    Gao, Lei
    Jing, Xiaoxue
    Hu, Zhenliang
    Lu, Junpeng
    Ni, Zhenhua
    CHINESE CHEMICAL LETTERS, 2021, 32 (10) : 3118 - 3122
  • [50] Conversion of Multi-layered MoTe2 Transistor Between P-Type and N-Type and Their Use in Inverter
    Liu, Junku
    Wang, Yangyang
    Xiao, Xiaoyang
    Zhang, Kenan
    Guo, Nan
    Jia, Yi
    Zhou, Shuyun
    Wu, Yang
    Li, Qunqing
    Xiao, Lin
    NANOSCALE RESEARCH LETTERS, 2018, 13