Gate direct-tunnelling and hot-carrier-induced hysteresis effect in partially depleted silicon-on-insulator floating-body MOSFETs

被引：5

作者：

Zhou, Jianhua ^{[1
,2
,3
]}

Pang, Albert ^{[1
]}

Zou, Shichang ^{[1
,2
]}

机构：

[1] Grace Semicond Mfg Corp, Shanghai 201203, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 20050, Peoples R China

[3] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2011年 / 44卷 / 07期

关键词：

SOI; MECHANISM;

D O I：

10.1088/0022-3727/44/7/075103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The hysteresis effect in the output characteristics of partially depleted (PD) silicon-on-insulator (SOI) floating-body MOSFETs with an ultra-thin gate oxide is studied taking account of both gate direct-tunnelling and impact ionization-induced hot-carrier mechanisms. It is proposed that hole tunnelling from valence band (HVB) for floating-body PD SOI n-MOSFETs, electron tunnelling from conduction band (ECB) for floating-body PD SOI p-MOSFETs and impact-ionization-induced hot carriers are the main causes of the hysteresis effect. Meanwhile, body-contact structures of T-gate and H-gate PD SOI MOSFETs are also studied under floating-body configurations. It is found that the influence of the converse poly-gate on the body-contact side on gate direct-tunnelling cannot be neglected in view of floating-body potential variation. Based on the measurement results, the hysteresis can be suppressed using T-gate and H-gate PD SOI MOSFETs with floating-body configurations.

引用

页数：6

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