Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers

被引：17

作者：

Hao, Ruiting ^{[1
,2
]}

Deng, Shukang ^{[1
]}

Shen, Lanxian ^{[1
]}

Yang, Peizhi ^{[1
]}

Tu, Jielei ^{[1
]}

Liao, Hua ^{[1
]}

Xu, Yingqiang ^{[2
]}

Niu, Zhichuan ^{[2
]}

机构：

[1] Yunnan Normal Univ, Inst Solar Energy, Key Lab Renewable Energy Adv Mat & Mfg Technol, Educ Minist, Kunming 650092, Yunnan Province, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

THIN SOLID FILMS | 2010年 / 519卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Gallium Arsenide; Gallium antimonide; Gallium antimonide/Aluminum antimonide; Superlattices; Molecular Beam Epitaxy; VAPOR-PHASE EPITAXY; SURFACE-MORPHOLOGY; GROWTH; SUPERLATTICES; TEMPERATURE; RELAXATION; DETECTORS; GAAS(001); MOCVD; FILMS;

D O I：

10.1016/j.tsf.2010.08.001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaSb films with AlSb/GaSb compound buffer layers were grown by molecular beam epitaxy on GaAs (001) substrates. The crystal quality and optical properties were studied by high resolution transition electron microscopy and low temperature photoluminescence spectra (PL), respectively. It was found that the AlSb/GaSb compound buffer layers can restrict the dislocations into GaSb epilayers. The intensity of PL spectra of GaSb layer becomes large with the increasing the periods of AlSb/GaSb superlattices, indicating that the optical quality of GaSb films is improved. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：228 / 230

页数：3

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