The identification and analysis of systematic yield loss

被引：6

作者：

Langford, RE ^{[1
]}

Hsu, G ^{[1
]}

Sun, C ^{[1
]}

机构：

[1] Silicon Mfg Partners, Singapore 738406, Singapore

来源：

2000 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE AND WORKSHOP | 2000年

关键词：

D O I：

10.1109/ASMC.2000.902565

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

With increasing expectations for yield and learning rates, a refined method of yield excursion determination is required This need is met through the use of yield trend box plots with overlaid wafer map composites by quartile. It was found that this method quickly identifies excursion lots based an spatial nonrandomness in addition to yield and its variation. Once identified, lots or wafers with spatial anomalies can be further studied using correlation utilities, time line studies, commonality analysis, and spatial signature matching.

引用

页码：92 / 95

页数：4