Terahertz-optical mixing in undoped and doped GaAs quantum wells: From excitonic to electronic intersubband transitions

被引：11
作者：
Carter, SG
Ciulin, V
Hanson, M
Huntington, AS
Wang, CS
Gossard, AC
Coldren, LA
Sherwin, MS
机构：
[1] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, iQUEST, Santa Barbara, CA 93106 USA
[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[4] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
PHYSICAL REVIEW B | 2005年 / 72卷 / 15期
关键词：
D O I：
10.1103/PhysRevB.72.155309
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The mixing of near-infrared and terahertz (THz) beams has been observed in n-doped GaAs quantum wells (QWs) and is shown to be quite different from that in undoped QWs. The resonant behavior of the sidebands demonstrates that mixing in doped QWs is primarily sensitive to electronic intersubband transitions while that in undoped QWs is due to excitonic intersubband transitions. These results demonstrate that THz-optical mixing can be used to probe the collective dynamics of a driven electron gas.
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页数：5
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