Structural, optical, and electrical properties of Zn(1-x)MgxO nano-compounds and ZnO/Zn(1-x)MgxO heterostructures

被引:4
|
作者
Ercan, Filiz [1 ,2 ]
Alamroo, Nabilah [1 ,2 ]
Ghrib, Taher [1 ,2 ]
Kayed, Tarek [3 ]
Ozcelik, Bekir [4 ]
Ercan, Ismail [5 ]
Alonizan, Norah [1 ,2 ]
Abubshait, Samar A. [1 ,6 ]
机构
[1] Imam Abdulrahman Bin Faisal Univ, Basic & Appl Sci Res Ctr, Nanomat Technol Unit, POB 1982, Dammam 31441, Saudi Arabia
[2] Imam Abdulrahman Bin Faisal Univ, Coll Sci, Dept Phys, POB 1982, City Dammam 31441, Saudi Arabia
[3] Imam Abdulrahman Bin Faisal Univ, Coll Engn, Dammam 31451, Saudi Arabia
[4] Cukurova Univ, Fac Sci & Letters, Dept Phys, TR-01330 Adana, Turkey
[5] Duzce Univ, Fac Engn, Dept Elect & Elect Engn, TR-81010 Duzce, Turkey
[6] Imam Abdulrahman Bin Faisal Univ, Coll Sci, Dept Chem, POB 1982, Dammam 31441, Saudi Arabia
关键词
Atomic and molecular structure; Magnetic properties; Electrical properties; Hall effect; ZnMgO heterostructures; MAGNESIUM-OXIDE; GROWTH; SEMICONDUCTOR; NANOPARTICLES; ZNO;
D O I
10.1016/j.matchemphys.2022.126479
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, the structural, thermal, optical, electrical and magnetic properties of Zn(1-x)MgxO (x = 0.0, 0.1, 0.3, 0.5) nano-compounds obtained by the addition of MgO to pure ZnO nano-compounds obtained by solid state reaction were investigated in detail. These nanomaterials were deposited by spin coating technique in hetero-structure of ZnO/Zn(1-x)MgxO. It was found by detailed structure solution that the crystal systems of nano materials obtained with MgO additive remained hexagonal, but the space group was transferred from P63mc to P6/mmm. The thermal gravimetry analysis shows the stability of prepared nanomaterials, the UV-Vis spectroscopy shows that the bandgap of the prepared was decreased from 3.02 to 2.52 eV with the Mg doping percentage. The Magnetization measurements at room temperature showed that all four of these Zn(1-x)MgxO nanostructures exhibited soft ferromagnetic behavior. The analysis of the ZnO/Zn(1-x)MgxO heterostructure showed that its band gap was increased from 3.69 to 3.79 eV, its carrier density was decreased from 1.14 x 10(19) to 4.20 x 10(13 )cm(-3) which introduce it as a good material to be used in optoelectronic devices field.
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页数:16
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