Dark signal degradation in proton-irradiated complementary metal oxide semiconductor active pixel sensor

被引:2
|
作者
Wang Bo [1 ,2 ]
Li Yu-Dong [1 ]
Guo Qi [1 ]
Liu Chang-Ju [3 ]
Wen Lin [1 ,2 ]
Ren Di-Yuan [1 ]
Zeng Jun-Zhe [1 ,2 ]
Ma Li-Ya [1 ,2 ]
机构
[1] Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Xinjiang Key Lab Informat Mat & Devices,CAS, Urumqi 830011, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Chongqing Optoelect Res Inst, Chongqing 400060, Peoples R China
基金
中国国家自然科学基金;
关键词
complementary metal oxide semiconductor active pixel sensor; dark signal; proton radiation; displacement effect;
D O I
10.7498/aps.64.084209
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In this paper, we discuss the dark signal increase in complementary metal oxide semiconductor (CMOS) active pixel sensor due to proton-induced damage, and present the basic mechanism that may cause failure. When the fluence of protons reaches a predetermined point, the change of dark signal of the device is measured offline. The experimental result shows that as the fluence of protons increases, mean dark signal increases rapidly. The main reason for dark signal degradation is: 1) the ionizing damage causes a build-up of oxide trapped charge and interface state at the Si-SiO2 interface. The creation of the interface traps (with energy levels within the silicon bandgap), which can communicate with carriers in the silicon, gives rise to the thermal generation of the electron-hole pairs and, hence increasing the dark signals; 2) when protons pass through the sensor, there is a possibility of collisions with silicon lattice atoms in the bulk silicon. In these collisions, atoms can be displaced from their lattice sites and defects are formed. These resulting defects can give rise to states with energy levels within the forbidden bandgap. The increasing of dark signal is therefore one of the prominent consequences of bulk displacement. We use multi-layered shielding simulation software to calculate the ionization damage dose and displacement damage dose. Based on the comparison of the test data of gamma radiation, combined with the device structure and process parameters, a theoretical model for separation proton-induced ionization and displacement damage effects on CMOS active pixel is constructed, and the degradation mechanism of the mean dark signal is investigated. The result shows that the contribution of ionization effect induced surface dark signal and the contribution of displacement damage induced bulk dark signal to dark signal degradation of the whole device are roughly equal in this domestic CMOS active pixel.
引用
收藏
页数:7
相关论文
共 19 条
  • [1] ELECTRICAL-CONDUCTION IN DIELECTRICS AT HIGH FIELDS
    ADAMEC, V
    CALDERWOOD, JH
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (05) : 551 - 560
  • [2] [Anonymous], 2007, Physics of Semiconductor Devices
  • [3] Cobalt-60, Proton and Electron Irradiation of a Radiation-Hardened Active Pixel Sensor
    Beaumel, Matthieu
    Herve, Dominique
    Van Aken, Dirk
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2010, 57 (04) : 2056 - 2065
  • [4] Elevated temperature irradiation at high dose rate of commercial linear bipolar ICs
    Boch, J
    Saigné, R
    Schrimpf, RD
    Fleetwood, DM
    Cizmarik, R
    Zander, D
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (05) : 2903 - 2907
  • [5] Total dose and displacement damage effects in a radiation-hardened CMOS APS
    Bogaerts, J
    Dierickx, B
    Meynants, G
    Uwaerts, D
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (01) : 84 - 90
  • [6] Enhanced dark current generation in proton-irradiated CMOS active pixel sensors
    Bogaerts, J
    Dierickx, B
    Mertens, R
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (03) : 1513 - 1521
  • [7] [代树武 Dai Shuwu], 2014, [中国科学. 技术科学, Scientia Sinica Technologica], V44, P361
  • [8] Research on the total dose effects for domestic VDMOS devices used in satellite
    Gao Bo
    Liu Gang
    Wang Li-Xin
    Han Zheng-Sheng
    Zhang Yan-Fei
    Wang Chun-Ling
    Wen Jing-Chao
    [J]. ACTA PHYSICA SINICA, 2012, 61 (17)
  • [9] Ionization versus displacement damage effects in proton irradiated CMOS sensors manufactured in deep submicron process
    Goiffon, V.
    Magnan, P.
    Saint-Pe, O.
    Bernard, F.
    Rolland, G.
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2009, 610 (01): : 225 - 229
  • [10] Total Dose Evaluation of Deep Submicron CMOS Imaging Technology Through Elementary Device and Pixel Array Behavior Analysis
    Goiffon, V.
    Magnan, P.
    Saint-pe, O.
    Bernard, F.
    Rolland, G.
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2008, 55 (06) : 3494 - 3501