Oxide film assisted dopant diffusion in silicon carbide

被引：12

作者：

Tin, Chin-Che ^{[1
]}

Mendis, Suwan ^{[1
]}

Chew, Kerlit ^{[2
]}

Atabaev, Ilkham ^{[3
]}

Saliev, Tojiddin ^{[3
]}

Bakhranov, Erkin ^{[3
]}

Atabaev, Bakhtiyar ^{[4
]}

Adedeji, Victor ^{[5
]}

Rusli ^{[6
]}

机构：

[1] Auburn Univ, Dept Phys, Auburn, AL 36849 USA

[2] Univ Tunku Abdul Rahman, Fac Sci & Engn, Dept Elect & Elect Engn, Kuala Lumpur, Malaysia

[3] Uzbek Acad Sci, Phys Tech Inst, Tashkent 700084, Uzbekistan

[4] Uzbek Acad Sci, Inst Elect, Tashkent 700125, Uzbekistan

[5] Elizabeth City State Univ, Dept Chem Geol & Phys, Elizabeth City, NC 27909 USA

[6] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore, Singapore

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 24期

关键词：

Silicon carbide; Impurity diffusion; Oxidation; Doping; BORON; IMPLANTATION; ALUMINUM;

D O I：

10.1016/j.tsf.2010.03.107

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：E118 / E120

页数：3

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