Temporal pulsed x-ray response of CdZnTe: In detector

被引：3
|
作者：
Guo, Rong-Rong [1 ,2 ]
Xu, Ya-Dong [2 ]
Zha, Gang-Qiang [2 ]
Wang, Tao [2 ]
Jie, Wan-Qi [2 ]
机构：
[1] Xiamen Univ Technol, Sch Optoelect & Commun Engn, Xiamen 361024, Peoples R China
[2] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Shaanxi, Peoples R China
来源：
CHINESE PHYSICS B | 2018年 / 27卷 / 12期
基金：
中国国家自然科学基金;
关键词：
CdZnTe; ultrafast-pulsed x-rays; transient current; charge carrier; CDTE; PERFORMANCE; TELLURIDE;
D O I：
10.1088/1674-1056/27/12/127202
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The temporal response of cadmium-zinc-telluride (CZT) crystals is evaluated at room temperature by using an ultrafast-pulsed x-ray source. The dynamics of carrier relaxation in a CZT single crystal is modeled at a microscopic level based on a multi-trapping effect. The effects of the irradiation flux and bias voltage on the amplitude and full width at half maximum (FWHM) of the transient currents are investigated. It is demonstrated that the temporal response process is affected by defect level occupation fraction. A fast photon current can be achieved under intense pulsed x-ray irradiation to be up to 2.78x10(9) photons mm(-2) s(-1). Meanwhile, it is found that high bias voltage could enhance carrier detrapping by suppressing the capture of structure defects and thus improve the temporal response of CZT detectors.
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页数：5
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