Charge-Based Modeling of Junctionless Double-Gate Field-Effect Transistors

被引：202

作者：

Sallese, Jean-Michel ^{[1
]}

Chevillon, Nicolas ^{[2
]}

Lallement, Christophe ^{[2
]}

Iniguez, Benjamin ^{[3
]}

Pregaldiny, Fabien ^{[2
]}

机构：

[1] Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland

[2] Univ Strasbourg, CNRS, Inst Elect Solide & Syst, F-67412 Illkirch Graffenstaden, France

[3] Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, Tarragona 43007, Spain

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 08期

基金：

瑞士国家科学基金会;

关键词：

FETs; MOS devices; semiconductor device modeling; silicon devices; transistors;

D O I：

10.1109/TED.2011.2156413

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We derived an analytical model for the junctionless double-gate metal-oxide-semiconductor field-effect transistor (DG MOSFET) device, the principle of which has been recently demonstrated. Despite some similarities with classical junction-based DG MOSFETs, the charge-potential relationships are quite different and cannot be merely mapped on existing multigate formalisms. This is particularly true for the technological parameters of interest where reported doping densities exceed 10(19) cm(-3) for 10- and 20-nm silicon channel thicknesses. Assessment of the model with numerical simulations confirms its validity for all regions of operation, i.e., from deep depletion to accumulation and from linear to saturation.

引用

页码：2628 / 2637

页数：10

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