Ultra shallow junction formation and dopant activation study of Ga implanted Si

被引：6

作者：

Gwilliam, R ^{[1
]}

Gennaro, S

Claudio, G

Sealy, BJ

Mulcahy, C

Biswas, S

机构：

[1] Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England

[2] IRST, ITC, Ist Trentino Cultura, Ctr Ric Sci & Tecnol, I-38050 Povo, Trento, Italy

[3] Cascade Sci Ltd, Uxbridge UB8 3PH, Middx, England

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2005年 / 237卷 / 1-2期

基金：

英国工程与自然科学研究理事会;

关键词：

ion implantation; gallium; USJ and shallow junctions;

D O I：

10.1016/j.nimb.2005.04.113

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The trend for decreasing geometries within CMOS architecture is driving the need for ever shallower, highly doped, low resistivity layers in silicon. The conventional dopant of choice, boron, as a result of its light mass requires that implant energies be ever reduced to meet the demands of these shallow junctions, with the inevitable effect on throughput due to implanter beam current limitations. In this paper we investigate using secondary ion mass spectrometry (SIMS), spreading resistance profiling (SRP) and Hall effect measurements, the alternate p-type dopant species of Ga and its behaviour in the energy range 2-5 keV, implanted into both single crystal Si and pre-amorphised material. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：121 / 125

页数：5

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