Magnetophotoluminescence investigations of charged excitons in GaAs/(Al,Ga)As quantum wells

被引：3
作者：
Lee, KS [1 ]
Lee, CD
Kim, Y
Smith, JM
机构：
[1] Elect & Telecommun Res Inst, Taejon 305600, South Korea
[2] Korea Res Inst Stand & Sci, Taejon 305600, South Korea
[3] Univ Calif Los Alamos Natl Lab, Natl High Magnet Field Lab, Los Alamos, NM 87545 USA
来源：
SOLID STATE COMMUNICATIONS | 1999年 / 110卷 / 02期
基金：
美国国家科学基金会;
关键词：
quantum wells; optical properties; luminescence;
D O I：
10.1016/S0038-1098(99)00007-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have observed charged excitons in undoped GaAs/Al0.25Ga0.75As multiple quantum wells of differing well sizes. Photoluminescence(PL) originated from each well shows a double peak associated with the neutral exciton and the charged exciton whose existence is due to a charge imbalance of photogenerated carriers in each well. The laser-power dependence and circular polarization characteristics of PL readily identifies the negatively charged exciton(X-) in wide wells where an excess electron can exist. The binding energy of electron in the singlet state of X-, the so-called trion binding energy, increases with the magnetic field. For a 19nm quantum well, it is 1.2 meV and 1.9 meV at B = 0 T and similar to 9T, respectively. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：97 / 101
页数：5
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